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2N7002L, 2V7002L
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0, I D = 10 m Adc)
V (BR)DSS
60
?
?
Vdc
Zero Gate Voltage Drain Current
(V GS = 0, V DS = 60 Vdc)
Gate ? Body Leakage Current, Forward
(V GS = 20 Vdc)
Gate ? Body Leakage Current, Reverse
(V GS = ? 20 Vdc)
T J = 25 ° C
T J = 125 ° C
I DSS
I GSSF
I GSSR
?
?
?
?
?
?
?
?
1.0
500
100
? 100
m Adc
nAdc
nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
On ? State Drain Current
(V DS ≥ 2.0 V DS(on) , V GS = 10 Vdc)
Static Drain ? Source On ? State Voltage
(V GS = 10 Vdc, I D = 500 mAdc)
(V GS = 5.0 Vdc, I D = 50 mAdc)
V GS(th)
I D(on)
V DS(on)
1.0
500
?
?
?
?
?
?
2.5
?
3.75
0.375
Vdc
mA
Vdc
Static Drain ? Source On ? State Resistance
(V GS = 10 V, I D = 500 mAdc)
(V GS = 5.0 Vdc, I D = 50 mAdc)
Forward Transconductance
(V DS ≥ 2.0 V DS(on) , I D = 200 mAdc)
T C = 25 ° C
T C = 125 ° C
T C = 25 ° C
T C = 125 ° C
r DS(on)
g FS
?
?
?
?
80
?
?
?
?
?
7.5
13.5
7.5
13.5
?
Ohms
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
Output Capacitance
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0, f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
?
?
?
50
25
5.0
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 25 Vdc, I D ^ 500 mAdc,
R G = 25 W , R L = 50 W , V gen = 10 V)
t d(on)
t d(off)
?
?
?
?
20
40
ns
ns
BODY ? DRAIN DIODE RATINGS
Diode Forward On ? Voltage
(I S = 11.5 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
V SD
I S
I SM
?
?
?
?
?
?
? 1.5
? 115
? 800
Vdc
mAdc
mAdc
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
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